The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Sep. 10, 2013
Applicant:

Stmicroelectronics, Inc., Coppell, TX (US);

Inventors:

Craig J. Rotay, Audubon, PA (US);

John C. Pritiskutch, Orwigsburg, PA (US);

Assignee:

STMicroelectronics, Inc., Coppell, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/445 (2006.01); H01L 21/48 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4821 (2013.01); H01L 23/49582 (2013.01); H01L 23/564 (2013.01); H01L 23/49517 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions. The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.


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