The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Dec. 21, 2012
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung Ho Kim, Seongnam-si, KR;
Sunghae Lee, Suwon-si, KR;
Hanvit Yang, Yongin-si, KR;
Dongwoo Kim, Incheon, KR;
Chaeho Kim, Gwangmyeong-si, KR;
Daehyun Jang, Seongnam-si, KR;
Ju-Eun Kim, Hwaseong-si, KR;
Yong-Hoon Son, Yongin-si, KR;
Sangryol Yang, Suwon-si, KR;
Myoungbum Lee, Seoul, KR;
Kihyun Hwang, Seongnam-si, KR;
Abstract
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.