The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Jan. 17, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Wei-Sheng Lei, San Jose, CA (US);

Aparna Iyer, Sunnyvale, CA (US);

Brad Eaton, Menlo Park, CA (US);

Madhava Rao Yalamanchili, Morgan Hill, CA (US);

Ajay Kumar, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/78 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/0271 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31105 (2013.01); H01L 21/31127 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68327 (2013.01);
Abstract

Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 μm thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging.


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