The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Sep. 27, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chung-Min Fu, Taoyuan County, TW;
Wan-Yu Lo, Zhongli, TW;
Chin-Chou Liu, Jhubei, TW;
Huan Chi Tseng, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G06F 17/5077 (2013.01); G06F 2217/12 (2013.01); G06F 2217/14 (2013.01); G06F 17/5081 (2013.01);
Abstract
A method of making a semiconductor device includes arranging a first cell and a second cell, determining, by a processor, a first pattern density of a first cell, determining a second pattern density of a second cell, determining a pattern density gradient from the first pattern density to the second pattern density, determining whether the pattern density gradient exceeds a pattern density gradient threshold, and indicating a design change if the pattern density gradient exceeds than the pattern density gradient threshold.