The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Feb. 14, 2013
Applicants:

Jinman Han, Seongnam-Si, KR;

Ho-chul Lee, Seoul, KR;

Min-su Kim, Hwaseong-Si, KR;

Sangwan Nam, Hwaseong-Si, KR;

Junghoon Park, Hwaseong-Si, KR;

Inventors:

Jinman Han, Seongnam-Si, KR;

Ho-Chul Lee, Seoul, KR;

Min-Su Kim, Hwaseong-Si, KR;

Sangwan Nam, Hwaseong-Si, KR;

Junghoon Park, Hwaseong-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G06F 12/02 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G11C 16/0483 (2013.01); G11C 16/3418 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method is provided for programming a flash memory device including memory cells formed in a direction perpendicular to a substrate, a first sub word line connected to first memory cells and selectable by a first selection line, and a second sub word line connected to second memory cells and selectable by a second selection line, the first and second memory cells being formed at the same level and being supplied with a program voltage at the same time. The method includes performing LSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; performing CSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively; and performing MSB program operations on the first and second sub word lines by enabling the first and second selection lines, respectively.


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