The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Feb. 11, 2011
Applicants:

Vishal Sarin, Cupertino, CA (US);

Jung-sheng Hoei, Newark, CA (US);

Frankie F. Roohparvar, Monte Sereno, CA (US);

Inventors:

Vishal Sarin, Cupertino, CA (US);

Jung-Sheng Hoei, Newark, CA (US);

Frankie F. Roohparvar, Monte Sereno, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01); G11C 27/00 (2006.01); G11C 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 27/005 (2013.01); G11C 27/02 (2013.01); G11C 2211/5621 (2013.01); G11C 2211/5634 (2013.01);
Abstract

A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is programmed and then verified with a ramped read voltage. The read voltage that turns on the memory cell is stored in the sample and hold circuit. The target threshold voltage is compared with the read voltage by a comparator circuit. When the read voltage is at least substantially equal to (i.e., is substantially equal to and/or starts to exceed) the target threshold voltage, the comparator circuit generates an inhibit signal.


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