The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Apr. 27, 2012
Applicants:

Troy L. Graves-abe, Wappingers Falls, NY (US);

Benjamin A. Himmel, Yorktown Heights, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Norman W. Robson, Hopewell Junction, NY (US);

Inventors:

Troy L. Graves-Abe, Wappingers Falls, NY (US);

Benjamin A. Himmel, Yorktown Heights, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Norman W. Robson, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01R 31/2853 (2013.01); H01L 21/76898 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A TSV structure, method of making the TSV structure and methods of testing the TSV structure. The structure including: a trench extending from a top surface of a semiconductor substrate to a bottom surface of the semiconductor substrate, the trench surrounding a core region of the semiconductor substrate; a dielectric liner on all sidewalls of the trench; and an electrical conductor filling all remaining space in the trench, the dielectric liner electrically isolating the electrical conductor from the semiconductor substrate and from the core region.


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