The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jan. 16, 2014
SK Hynix Inc., Gyeonggi-do, KR;
Min Seok Kim, Gyeonggi-do, KR;
Hyo Seob Yoon, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor apparatus and a method of fabricating the same are provided. The method includes sequentially depositing a gate electrode material and a sacrificial insulating layer on a semiconductor substrate, patterning the gate electrode material and the sacrificial insulating layer to form one or more holes exposing a surface of the semiconductor substrate, forming a gate insulating layer on an inner sidewall of the hole, forming one or more pillar patterns each filled in the hole and recessed on a top thereof, forming a contact unit and an electrode unit on the pillar pattern, removing a patterned sacrificial insulating layer and forming a spacer nitride material on the semiconductor substrate from which the patterned sacrificial insulating layer is removed, and removing portions of the spacer nitride material and a patterned gate electrode material between the pillar patterns.