The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Apr. 16, 2012
Shyan-liang Chou, Tainan, TW;
Tsung-min Kuo, Tainan, TW;
Po-wen Su, Kaohsiung, TW;
Chun-mao Chiou, Chiayi County, TW;
Feng-mou Chen, Tainan, TW;
Shyan-Liang Chou, Tainan, TW;
Tsung-Min Kuo, Tainan, TW;
Po-Wen Su, Kaohsiung, TW;
Chun-Mao Chiou, Chiayi County, TW;
Feng-Mou Chen, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of trimming spacers includes etching a silicon oxide spacer when forming an outmost spacer, so that a silicon carbon nitride spacer contacting the gate electrode exposes an area. The exposure area of the silicon carbon nitride spacer can then be partly removed by phosphate acid. At the end of the semiconductor process, at least part of the top surface of the silicon carbon nitride spacer will be lower than the top surface of a gate electrode.