The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Nov. 13, 2009
Applicants:

Takeshi Suzuki, Osaka, JP;

Kenichi Hotehama, Osaka, JP;

Koichi Hirano, Osaka, JP;

Seiichi Nakatani, Osaka, JP;

Inventors:

Takeshi Suzuki, Osaka, JP;

Kenichi Hotehama, Osaka, JP;

Koichi Hirano, Osaka, JP;

Seiichi Nakatani, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/78603 (2013.01); H01L 29/66765 (2013.01); H01L 29/78681 (2013.01); H01L 29/7869 (2013.01);
Abstract

There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.


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