The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2015

Filed:

Jul. 13, 2011
Applicants:

Rie Katou, Ichihara, JP;

Takayuki Matsuzaki, Ichihara, JP;

Shinya Katou, Ichihara, JP;

Ryoji Furutani, Ichihara, JP;

Tatsuya Sakuta, Ichihara, JP;

Kouji Komorida, Ichihara, JP;

Inventors:

Rie Katou, Ichihara, JP;

Takayuki Matsuzaki, Ichihara, JP;

Shinya Katou, Ichihara, JP;

Ryoji Furutani, Ichihara, JP;

Tatsuya Sakuta, Ichihara, JP;

Kouji Komorida, Ichihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01); C09J 7/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); H01L 21/67092 (2013.01); H01L 21/67132 (2013.01); H01L 21/78 (2013.01); C09J 7/02 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68377 (2013.01); C09J 2201/606 (2013.01); C09J 2201/61 (2013.01); C09J 2203/326 (2013.01); C09J 2201/36 (2013.01);
Abstract

A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm.


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