The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Feb. 18, 2013
Infineon Technologies Austria Ag, Villach, AT;
Armin Willmeroth, Augsburg, DE;
Franz Hirler, Isen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Uwe Wahl, Munich, DE;
Winfried Kaindl, Unterhaching, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A super junction semiconductor device includes a semiconductor portion with a first surface and a parallel second surface. A doped layer of a first conductivity type is formed at least in a cell area. Columnar first super junction regions of a second, opposite conductivity type extend in a direction perpendicular to the first surface. Columnar second super junction regions of the first conductivity type separate the first super junction regions from each other. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A distance between the first super junction regions and the second surface does not exceed 30 μm. The on-state or forward resistance of low-voltage devices rated for reverse breakdown voltages below 1000 V can be defined by the resistance of the super junction structure.