The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jun. 27, 2013
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama, JP;

Inventors:

Ryuji Yamabi, Yokohama, JP;

Yoshifumi Nishimoto, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/00 (2006.01); H01L 31/02 (2006.01); H01L 31/109 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02002 (2013.01); H01L 31/02005 (2013.01); H01L 31/109 (2013.01); H01L 31/022416 (2013.01);
Abstract

A semiconductor light-receiving element includes: a light-receiving portion that is provided on a semi-insulating substrate and has a mesa shape in which semiconductor layers are laminated; a lamination structure of insulating films that is provided on a part of a side face of the light-receiving portion and has a structure in which a first insulating film comprised of a silicon nitride film, a second insulating film comprised of a silicon oxynitride film and a third insulating film comprised of a silicon nitride film are laminated in contact with each other; and a resin film that is provided adjacent to the light-receiving portion, the resin film being sandwiched in or between any of the first insulating film, the second insulating film and the third insulating film.


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