The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Mar. 15, 2013
Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Fabian Radulescu, Chapel Hill, NC (US);

Helmut Hagleitner, Zebulon, NC (US);

Terry Alcorn, Cary, NC (US);

William T. Pulz, Cary, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53247 (2013.01); H01L 21/76879 (2013.01); H01L 21/78 (2013.01); H01L 23/53252 (2013.01);
Abstract

Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias.


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