The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jul. 26, 2013
Applicant:

Elpida Memory, Inc., Tokyo, JP;

Inventor:

Yoshihiro Takaishi, Tokyo, JP;

Assignee:

PS4 Luxco S.a.r.l., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01);
Abstract

Disclosed herein is a device that includes: a semiconductor substrate including an active region having a semiconductor pillar, the semiconductor pillar having first and second side surfaces substantially perpendicular to a main surface of the semiconductor substrate; an element isolation region surrounding the active region, the element isolation region including a first insulating pillar that is in contact with the first side surface of the semiconductor pillar; a gate electrode that covers the second side surface of the semiconductor pillar with an intervention of a gate insulating film; a first impurity diffusion layer formed on an upper surface of the semiconductor pillar; a second impurity diffusion layer formed in the active region located below the semiconductor pillar; and an etching protection wall that is arranged to surround the semiconductor pillar.


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