The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Mar. 07, 2011
Applicants:
Jae-goo Lee, Suwon-si, KR;
Jung-dal Choi, Hwaseong-si, KR;
Young-woo Park, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 29/66833 (2013.01); H01L 29/66825 (2013.01); H01L 29/42332 (2013.01); H01L 29/792 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01); H01L 29/7926 (2013.01); H01L 27/11521 (2013.01); H01L 27/11578 (2013.01); H01L 21/28282 (2013.01); H01L 27/1157 (2013.01); B82Y 10/00 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01);
Abstract
A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the semiconductor column. Each of the storage cells includes a tunneling insulating layer disposed on the sidewall of the semiconductor column, a polymer layer disposed on the tunneling insulating layer, a plurality of quantum dots disposed on or in the polymer layer and a blocking insulating layer disposed on the polymer layer.