The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jul. 06, 2011
Makoto Kiyama, Itami, JP;
Yu Saitoh, Itami, JP;
Masaya Okada, Osaka, JP;
Masaki Ueno, Itami, JP;
Seiji Yaegashi, Yokohama, JP;
Kazutaka Inoue, Yokohama, JP;
Mitsunori Yokoyama, Yokohama, JP;
Makoto Kiyama, Itami, JP;
Yu Saitoh, Itami, JP;
Masaya Okada, Osaka, JP;
Masaki Ueno, Itami, JP;
Seiji Yaegashi, Yokohama, JP;
Kazutaka Inoue, Yokohama, JP;
Mitsunori Yokoyama, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n-type source layer. The p-type GaN-based supplementary layer and the n-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.