The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jun. 09, 2014
Applicant:

Sandisk 3d Llc, Milpitas, CA (US);

Inventors:

Yung-Tin Chen, Santa Clara, CA (US);

Chuanbin Pan, Sunnyvale, CA (US);

Andrei Mihnea, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Kun Hou, Milpitas, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 29/02 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/08 (2013.01); H01L 45/1616 (2013.01); H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 27/2418 (2013.01); H01L 45/12 (2013.01); Y10S 438/957 (2013.01);
Abstract

A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.


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