The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Mar. 29, 2013
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;
Inventors:
Yoshifumi Nishimoto, Yokohama, JP;
Ryuji Yamabi, Kanagawa, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 31/0232 (2014.01); H01L 31/105 (2006.01); G02B 3/00 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 31/105 (2013.01); G02B 3/0018 (2013.01); G03F 7/0005 (2013.01);
Abstract
A process to form a lens on a semiconductor material is disclosed. The process includes steps of: forming double layers of an intermediate layer on the semiconductor material and a mask layer made of hard-baked photoresist on the semiconductor substrate; the first transcribing the convex shape of the mask layer on the intermediate layer; and the second scribing the convex shape of the intermediate layer on the semiconductor material.