The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Feb. 07, 2014
Macronix International Co., Ltd., Hsinchu, TW;
Yen-Hao Shih, New Taipei, TW;
Ying-Tso Chen, Kaoshsiung, TW;
Shih-Chang Tsai, Hsinchu County, TW;
Chun-Fu Chen, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is provided. A silicon layer is formed on the substrate. A planarization process is performed to make the silicon layer having a planar surface. A part of the silicon layer is removed to form a plurality of first gates on the first region and to form a plurality of second gates on the second region. The height of the first gates is greater than the height of the second gates, and top surfaces of the first gates and the second gates have the same height level. A dielectric layer covering the first gates and the second gates is formed and exposes the top surfaces of the first gates and the second gates. A metal silicide is formed on the top surfaces of the first gates and the second gates.