The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Feb. 22, 2008
Felix P. Anderson, Colchester, VT (US);
Steven P. Barkyoumb, Burlington, VT (US);
Edward C. Cooney, Iii, Jericho, VT (US);
Thomas L. Mcdevitt, Underhill, VT (US);
William J. Murphy, North Ferrisburgh, VT (US);
David C. Strippe, Westford, VT (US);
Felix P. Anderson, Colchester, VT (US);
Steven P. Barkyoumb, Burlington, VT (US);
Edward C. Cooney, III, Jericho, VT (US);
Thomas L. McDevitt, Underhill, VT (US);
William J. Murphy, North Ferrisburgh, VT (US);
David C. Strippe, Westford, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.