The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Oct. 25, 2012
Massachusetts Institute of Technology, Cambridge, MA (US);
Mark T. Winkler, Brooklyn, NY (US);
Tonio Buonassisi, Cambridge, MA (US);
Riley E. Brandt, Simsbury, CT (US);
Michael J. Aziz, Concord, MA (US);
Austin Joseph Akey, Boston, MA (US);
President and Fellows of Harvard College, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Method for making thin crystalline or polycrystalline layers. The method includes electrochemically etching a crystalline silicon template to form a porous double layer thereon, the double layer including a highly porous deeper layer and a less porous shallower layer. The shallower layer is irradiated with a short laser pulse selected to recrystallize the shallower layer resulting in a crystalline layer. Silicon is deposited on the recrystallized shallower layer and the silicon is irradiated with a short laser pulse selected to crystalize the silicon leaving a layer of crystallized silicon on the template. Thereafter, the layer of crystallized silicon is separated from the template. The process of the invention can be used to make optoelectronic devices.