The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jul. 26, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Junho Yoon, Suwon-si, KR;

Dongchan Kim, Seoul, KR;

Gyungjin Min, Seongnam-si, KR;

Jaehong Park, Seongnam-si, KR;

Yongmoon Jang, Yeonsu-gu, KR;

Je-Woo Han, Hwasung-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 28/90 (2013.01);
Abstract

A method of fabricating a semiconductor device with capacitors may include forming a mold structure on a lower structure, patterning the mold structure to form a plurality of holes exposing the lower structure, forming a protection layer on sidewalls of the mold structure exposed by the holes, forming lower electrodes in the holes provided with the protection layer, removing the mold structure to expose the protection layer, removing the protection layer to expose sidewalls of the lower electrodes, and sequentially forming a dielectric film and an upper electrode on the lower electrodes.


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