The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jun. 01, 2012
Applicants:
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
Inventors:
Robert J. Falster, London, GB;
Vladimir V. Voronkov, Merano, IT;
Assignee:
MEMC Singapore Pte. Ltd. (UEN200614794D), Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3221 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01);
Abstract
Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.