The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Aug. 02, 2012
Cha-dong Kim, Hwaseong-si, KR;
Sang Hyun Yun, Suwon-si, KR;
Jung-in Park, Seoul, KR;
Su-yeon Sim, Changwon-si, KR;
Hi-kuk Lee, Yongin-si, KR;
Sang-tae Kim, Iksan-si, KR;
Yong-il Kim, Iksan-si, KR;
Shi-jin Sung, Iksan-si, KR;
Eun-sang Lee, Iksan-si, KR;
Sung-yeol Jin, Iksan-si, KR;
Cha-Dong Kim, Hwaseong-si, KR;
Sang Hyun Yun, Suwon-si, KR;
Jung-In Park, Seoul, KR;
Su-Yeon Sim, Changwon-si, KR;
Hi-Kuk Lee, Yongin-si, KR;
Sang-Tae Kim, Iksan-si, KR;
Yong-Il Kim, Iksan-si, KR;
Shi-Jin Sung, Iksan-si, KR;
Eun-Sang Lee, Iksan-si, KR;
Sung-Yeol Jin, Iksan-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a display substrate are disclosed. A photoresist composition includes an alkali-soluble resin, a quinone diazide-based compound, a multivalent phenol-based compound, and a solvent. Therefore, photosensitivity for light having a wavelength in a range of about 392 nm to about 417 nm may be improved, and reliability of forming a photo pattern and a thin film pattern using the photoresist composition may be improved.