The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jan. 31, 2014
Applicants:
Hung-ping Tsai, Zhonghe, TW;
Shih-kuan Chen, Yung-He, TW;
Lung-ching Kao, Taipei, TW;
Inventors:
Assignee:
Vishay General Semiconductor, LLC, Columbus, NE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6609 (2013.01); H01L 29/0657 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01);
Abstract
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.