The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
May. 26, 2013
Applicant:
Anpec Electronics Corporation, Hsin-Chu, TW;
Inventors:
Yung-Fa Lin, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Assignee:
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01);
Abstract
A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a plurality of epitaxial islands arranged around the cell region, and a grid type epitaxial layer in the peripheral termination region. The grid type epitaxial layer separates the plurality of epitaxial islands from one another.
Lin, Yung-Fa. (2015). Power semiconductor device and fabrication method thereof (U.S. Patent No. 8963260). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8963260
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile