The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 17, 2011
Applicants:
Tsung-yi Huang, Hsinchu, TW;
Chien-hao Huang, Magong, TW;
Inventors:
Tsung-Yi Huang, Hsinchu, TW;
Chien-Hao Huang, Magong, TW;
Assignee:
Richtek Technology Corporation, R.O.C., Chupei, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/0886 (2013.01); H01L 29/0692 (2013.01); H01L 21/823418 (2013.01); H01L 29/1045 (2013.01); H01L 29/41758 (2013.01); H01L 29/423 (2013.01); H01L 29/66659 (2013.01); H01L 29/0634 (2013.01);
Abstract
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.