The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Apr. 23, 2014
Applicant:
John L. Hostetler, Monmouth Junction, NJ (US);
Inventor:
John L. Hostetler, Monmouth Junction, NJ (US);
Assignee:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/04 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 21/0485 (2013.01); H01L 21/304 (2013.01);
Abstract
Systems and methods for semiconductor wafer processing include irradiating a surface of a semiconductor wafer with a laser beam of sufficient energy to alter a band gap of semiconductor material thereby melting a portion of the wafer to generate a graphitic layer area. A metal layer is then depositing on the surface to create ohmic contacts at the area that where melted by the laser.
Hostetler, John. (2015). Formation of ohmic contacts on wide band gap semiconductors (U.S. Patent No. 8962468). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8962468
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile