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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8961814 B1

PDFFull Text
Expired
Date of Patent:
Feb. 24, 2015

Filed:

Dec. 18, 2013

High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure

Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Jeroen Van Duren, Palo Alto, CA (US);

Zhi-Wen Wen Sun, Sunnyvale, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:

Duy Deo

Int. Cl.
CPC ...
C09K 13/00 (2006.01); C09K 13/04 (2006.01); C09K 13/08 (2006.01); C09K 13/06 (2006.01); C09K 13/02 (2006.01); H01L 21/306 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/465 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 27/1225 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 21/465 (2013.01); H01L 21/707 (2013.01);
Abstract

Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.

Find Patent Forward Citations

Van Duren, Jeroen. (2015). High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure (U.S. Patent No. 8961814). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8961814

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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