The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Jun. 26, 2013
Applicants:

Riken, Wako-shi, JP;

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Inventors:

Shigenori Fujikawa, Wako, JP;

Harumi Hayakawa, Wako, JP;

Takahiro Senzaki, Kawasaki, JP;

Ken Miyagi, Kawasaki, JP;

Assignees:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Riken, Wako-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00531 (2013.01); B81C 1/00031 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31133 (2013.01); B81C 2201/0198 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm), and having vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and the developing solution further contains metal alkoxide.


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