The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 26, 2009
Applicant:
Wenjun Qin, Missoula, MT (US);
Inventor:
Wenjun Qin, Missoula, MT (US);
Assignee:
GTAT Corporation, Merrimack, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C01B 33/035 (2006.01); C30B 28/12 (2006.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); C30B 28/12 (2013.01); C23C 16/46 (2013.01); C01B 33/035 (2013.01); C23C 16/45563 (2013.01);
Abstract
Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.