The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Aug. 31, 2012
Applicants:

Yung-hung Wang, Hsinchu County, TW;

Sheng-huang Huang, Tainan, TW;

Kuei-hung Shen, Hsinchu, TW;

Keng-ming Kuo, Yunlin County, TW;

Inventors:

Yung-Hung Wang, Hsinchu County, TW;

Sheng-Huang Huang, Tainan, TW;

Kuei-Hung Shen, Hsinchu, TW;

Keng-Ming Kuo, Yunlin County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.


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