The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Sep. 23, 2011
Young-jae Lee, Seoul, KR;
Kyoung Jong Yoo, Seoul, KR;
Jin Su Kim, Seoul, KR;
Jun Lee, Seoul, KR;
Yong IN Lee, Seoul, KR;
Junbo Yoon, Seoul, KR;
Jeongho Yeon, Seoul, KR;
Joo-hyung Lee, Seoul, KR;
Jeong Oen Lee, Seoul, KR;
Young-Jae Lee, Seoul, KR;
Kyoung Jong Yoo, Seoul, KR;
Jin Su Kim, Seoul, KR;
Jun Lee, Seoul, KR;
Yong In Lee, Seoul, KR;
JunBo Yoon, Seoul, KR;
JeongHo Yeon, Seoul, KR;
Joo-Hyung Lee, Seoul, KR;
Jeong Oen Lee, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.