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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8956952 B1

PDFFull Text
Date of Patent:
Feb. 17, 2015

Filed:

Mar. 11, 2013

Multilayer substrate structure and method of manufacturing the same

Applicant:

Tivra Corporation, Pleasant Hill, CA (US);

Inventors:

Francisco Machuca, Oakland, CA (US);

Indranil De, Mountain View, CA (US);

Assignee:

Tivra Corporation, Pleasant Hill, CA (US);

Attorney:

Alston & Bird LLP

Primary Examiner:

Eva Y Mantalvo

Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 21/02 (2006.01); C30B 19/12 (2006.01); C30B 1/12 (2006.01); C30B 23/02 (2006.01); C30B 30/02 (2006.01); C30B 25/02 (2006.01); C30B 23/06 (2006.01); C30B 23/08 (2006.01); C30B 11/14 (2006.01); C30B 25/06 (2006.01); C30B 13/34 (2006.01); C30B 1/02 (2006.01); H01L 29/205 (2006.01); C30B 15/00 (2006.01); C30B 29/40 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); H01L 21/02488 (2013.01); C30B 19/12 (2013.01); C30B 1/12 (2013.01); H01L 21/0237 (2013.01); C30B 23/02 (2013.01); C30B 30/02 (2013.01); C30B 25/02 (2013.01); C30B 23/066 (2013.01); H01L 21/0254 (2013.01); C30B 23/08 (2013.01); H01L 21/02439 (2013.01); C30B 11/14 (2013.01); C30B 25/06 (2013.01); C30B 13/34 (2013.01); C30B 1/02 (2013.01); H01L 21/02502 (2013.01); H01L 29/205 (2013.01); C30B 15/007 (2013.01); H01L 21/02436 (2013.01); C30B 25/183 (2013.01);
Abstract

A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor.

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