The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jul. 31, 2014
Sumco Corporation, Tokyo, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Syouji Nogami, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
Shoichi Yamauchi, Kariya, JP;
Nobuhiro Tsuji, Kariya, JP;
Toshiyuki Morishita, Kariya, JP;
Sumco Corporation, Tokyo, JP;
Denso Corporation, Aichi, JP;
Abstract
A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type layer formed on an N-type substrate. This trench is used to leave voids after the formation of a P-type epitaxial film on the N-type layer. Then, the voids formed in the N-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.