The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Nov. 30, 2012
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Frank Jakubowski, Dresden, DE;

Juergen Faul, Radebeul, DE;

Assignee:

GLOBALFOUNDRIES Inc, Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/60 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 27/1104 (2013.01); H01L 21/823475 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01);
Abstract

One device includes first and second spaced-apart active regions formed in a semiconducting substrate, a layer of gate insulation material positioned on the first active region, and a conductive line feature that has a first portion positioned above the gate insulation material and a second portion that conductively contacts the second active region. One method includes forming first and second spaced-apart active regions in a semiconducting substrate, forming a layer of gate insulation material on the first and second active regions, performing an etching process to remove a portion of the gate insulation material formed on the second active region to expose a portion of the second active region, and forming a conductive line feature that comprises a first portion positioned above the layer of gate insulation material formed on the first active region and a second portion that conductively contacts the exposed portion of the second active region.


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