The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Dec. 20, 2010
Applicants:

Russell T. Herrin, Essex Junction, VT (US);

Christopher V. Jahnes, Upper Saddle River, NJ (US);

Anthony K. Stamper, Williston, VT (US);

Eric J. White, Charlotte, VT (US);

Inventors:

Russell T. Herrin, Essex Junction, VT (US);

Christopher V. Jahnes, Upper Saddle River, NJ (US);

Anthony K. Stamper, Williston, VT (US);

Eric J. White, Charlotte, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01H 1/00 (2006.01); B81C 1/00 (2006.01); H01H 57/00 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01H 1/0036 (2013.01); B81C 1/00476 (2013.01); H01H 57/00 (2013.01); G06F 17/5072 (2013.01); B81B 2201/014 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0167 (2013.01); B81C 2201/017 (2013.01); H01H 2057/006 (2013.01);
Abstract

A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.


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