The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Feb. 16, 2013
Fujitsu Semiconductor Limited, Yokohama, JP;
Hideaki Kikuchi, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiOfilm) of a predetermined pattern is formed on the Pt film, and the Pt film and the upper electrode film are etched. Then, an insulating protective film is formed on an entire surface, and a side surface of the upper electrode film is covered with the insulating protective film. Next, the ferroelectric film and the lower electrode film are etched, thus forming a ferroelectric capacitor.