The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Jul. 15, 2010
Applicants:

Shinya Nakamura, Susono, JP;

Yoshinori Fujii, Susono, JP;

Hideto Nagashima, Susono, JP;

Inventors:

Shinya Nakamura, Susono, JP;

Yoshinori Fujii, Susono, JP;

Hideto Nagashima, Susono, JP;

Assignee:

Ulvac, Inc., Kanagawa, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/56 (2006.01); C23C 14/06 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0641 (2013.01); C23C 14/56 (2013.01); C23C 14/0036 (2013.01); C23C 14/568 (2013.01);
Abstract

There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.


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