The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Dec. 07, 2012
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Hsin-Wen Chen, Kaohsiung, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/12 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 11/419 (2013.01);
Abstract

A memory array includes a plurality of columns of memory cells and each column of memory cells of the memory array is coupled to a local voltage source, a bit line, and a bit line bar. Provide a working voltage to pre-charge the bit line and the bit line bar of the column of memory cells when a memory cell of the column of memory cells is selected to be read, and meanwhile use local voltage sources coupled to remaining columns of memory cells of the memory array to provide high voltages lower than the working voltage to pre-charge bit lines and bit line bars of the remaining columns of memory cells.


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