The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Jul. 31, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Ying-Chieh Tsai, Chiayi, TW;

Wing-Chor Chan, Hsinchu, TW;

Jeng Gong, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/72 (2006.01); H01L 29/739 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H03K 17/567 (2013.01);
Abstract

A semiconductor device and an operating method for the same are provided. The semiconductor device includes a first doped region, a second doped region, a first doped contact, a second doped contact, a first doped layer, a third doped contact and a first gate structure. The first doped contact and the second doped contact are on the first doped region. The first doped contact and the second doped contact has a first PN junction therebetween. The first doped layer is under the first or second doped contact. The first doped layer and the first or second doped contact has a second PN junction therebetween. The second PN junction is adjoined with the first PN junction.


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