The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
May. 17, 2013
Applicant:
Futurewei Technologies, Inc., Plano, TX (US);
Inventors:
Assignee:
Futurewei Technologies, Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H05K 7/00 (2006.01); H01L 23/13 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/48 (2013.01); H01L 23/13 (2013.01); H01L 23/49827 (2013.01); H01L 23/49894 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/15159 (2013.01); H01L 2924/15311 (2013.01); H01L 23/147 (2013.01); H01L 23/15 (2013.01);
Abstract
Polyimide-based redistribution layers (RDLs) can be employed to reduce thermo-mechanical stress that is exerted on conductive interconnections bonded to interposers in 2.5 D semiconductor packaging configurations. The polyimide-based RDL is located on an upper or lower face of an interposer. Additionally, height differentials between laterally adjacent semiconductor dies in 2.5 D semiconductor packages can be reduced or eliminated by using different diameter micro-bumps, different height copper pillars, or a multi-tiered interposer to lower taller semiconductor dies in relation to shorter semiconductor dies.