The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Nov. 18, 2010
Guan-wei Wu, Hsinchu, TW;
I-chen Yang, Hsinchu, TW;
Yao-wen Chang, Hsinchu, TW;
Tao-cheng LU, Hsinchu, TW;
Guan-Wei Wu, Hsinchu, TW;
I-Chen Yang, Hsinchu, TW;
Yao-Wen Chang, Hsinchu, TW;
Tao-Cheng Lu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A non-volatile memory and a manufacturing method thereof are provided. The non-volatile memory includes a substrate, a gate structure, a first doped region, a second doped region and a pair of isolation structures. The gate structure is disposed on the substrate. The gate structure includes a charge storage structure, a gate and spacers. The charge storage structure is disposed on the substrate. The gate is disposed on the charge storage structure. The spacers are disposed on the sidewalls of the gate and the charge storage structure. The first doped region and the second doped region are respectively disposed in the substrate at two sides of the charge storage structure and at least located under the spacers. The isolation structures are respectively disposed in the substrate at two sides of the gate structure.