The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Nov. 20, 2012
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Qingchun Zhang, Cary, NC (US);
Jennifer Duc, Cary, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 21/28 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/872 (2013.01); H01L 29/66053 (2013.01); H01L 29/0619 (2013.01); H01L 29/6606 (2013.01);
Abstract
The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a Schottky diode and even more preferably a Silicon Carbide (SiC) Schottky diode. However, the semiconductor device may more generally be any type of semiconductor device having a Schottky contact such as, for example, a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).