The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Sep. 01, 2011
Applicants:

Naokazu Sakoda, Kobe, JP;

Hiroyuki Takamatsu, Kobe, JP;

Masahiro Inui, Kobe, JP;

Futoshi Ojima, Kobe, JP;

Inventors:

Naokazu Sakoda, Kobe, JP;

Hiroyuki Takamatsu, Kobe, JP;

Masahiro Inui, Kobe, JP;

Futoshi Ojima, Kobe, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/16 (2006.01); G01N 21/63 (2006.01); H01L 21/66 (2006.01); G01N 21/84 (2006.01); G01N 22/00 (2006.01);
U.S. Cl.
CPC ...
G01T 1/16 (2013.01); G01N 21/63 (2013.01); H01L 22/12 (2013.01); G01N 21/8422 (2013.01); G01N 22/00 (2013.01);
Abstract

The present invention provides a crystalline quality evaluation apparatus () and a crystalline quality evaluation method for thin-film semiconductors, which are designed to evaluate crystalline quality of a sample () of a thin-film semiconductor () by emitting excitation light and an electromagnetic wave to irradiate a measurement site of the sample (), and detecting an intensity of a reflected electromagnetic wave from the sample (). In the present invention, the thin-film semiconductor () of the sample () is formed on an electrically conductive film (b), and a dielectric () transparent to the excitation light is additionally disposed between the sample () and a waveguide () for emitting the electromagnetic wave therefrom. Thus, the thin-film semiconductor crystalline quality evaluation apparatus () and method configured in this manner make it possible to evaluate the crystalline quality even in the above situation where the electrically conductive film () is formed under the semiconductor thin-film ().


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