The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Jun. 15, 2012
Tsutomu Ogihara, Jyoetsu, JP;
Takafumi Ueda, Jyoetsu, JP;
Toshiharu Yano, Jyoetsu, JP;
Fujio Yagihashi, Jyoetsu, JP;
Tsutomu Ogihara, Jyoetsu, JP;
Takafumi Ueda, Jyoetsu, JP;
Toshiharu Yano, Jyoetsu, JP;
Fujio Yagihashi, Jyoetsu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this compositionRRRSi(OR)  (1)U(OR)(OR)  (2)RRRSi(OR)  (3)Si(OR)  (4).