The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Jan. 06, 2012
Applicants:

Qun Shao, Beijing, CN;

Zhongshan Hong, Beijing, CN;

Inventors:

Qun Shao, Beijing, CN;

Zhongshan Hong, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01);
Abstract

A semiconductor device and a manufacturing method therefor is based on the fact that a thinner liner oxide layer on the bottom of the trenches can lead to a higher subsequent deposition rate. After forming trenches and a liner oxide layer and before depositing a filling oxide layer in the trenches, a portion of or all of the thickness of the liner oxide layer on bottom of trenches in an isolation area is removed. Removing some or all of a liner oxide layer on the bottom of trenches in an isolation area can improve the deposition rate for trenches in such that the difference in thickness can be reduced for deposited filling oxide layer between isolation area and dense area.


Find Patent Forward Citations

Loading…