The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Dec. 15, 2011
Fumitake Mieno, Beijing, CN;
Fumitake Mieno, Beijing, CN;
Abstract
This disclosure relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a patterned stacked structure formed on a semiconductor substrate, the stacked structure comprising a silicon-containing semiconductor layer overlaying the semiconductor substrate, a gate dielectric layer overlaying the silicon-containing semiconductor layer and a gate layer overlaying the gate dielectric layer; and a doped epitaxial semiconductor layer on opposing sides of the silicon-containing semiconductor layer forming raised source/drain extension regions. Optionally, the silicon-containing semiconductor layer may be used as a channel region. According to this disclosure, the source/drain extension regions can be advantageously made to have a shallow junction depth (or a small thickness) and a high doping concentration.