The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Mar. 10, 2010
Pan-kwi Park, Suwon-si, KR;
Dong-suk Shin, Yongin-si, KR;
Yong-kuk Jeong, Suwon-si, KR;
Dong-hyun Roh, Suwon-si, KR;
Ha-jin Lim, Seoul, KR;
Pan-Kwi Park, Suwon-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Yong-Kuk Jeong, Suwon-si, KR;
Dong-Hyun Roh, Suwon-si, KR;
Ha-Jin Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.